Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

Sat. Mar 18, 2023 9:00 AM - 12:30 PM A301 (Building No. 6)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-A301-1] [The 44th Young Scientist Award Speech] High-Efficiency GaN Power Amplifiers Based on GaN-on-GaN HEMTs

〇Yusuke Kumazaki¹, Toshihiro Ohki¹, Junji Kotani¹, Shiro Ozaki¹, Yuichi Minoura¹, Masato Nishimori¹, Naoya Okamoto¹, Masaru Sato¹, Norikazu Nakamura¹ (1.Fujitsu Ltd.)

9:15 AM - 9:30 AM

[18a-A301-2] Dependence of channel mobility in GaN-MOSFET on gate oxide deposition methods

〇(M1)Daichi Ikuta¹, Shota Sato¹, Masato Omori¹ (1.Oita Univ.)

9:30 AM - 9:45 AM

[18a-A301-3] Improvement of V_th-μ_ch characteristics by suppressing interfacial oxidation of GaN MOSFET

〇Tsurugi Kondo¹, Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric, 2.NICHe, Tohoku Univ.)

9:45 AM - 10:00 AM

[18a-A301-4] Characteristics of GaN-MOSFETs with the Al-doped surface

〇Katsunori Ueno¹, Tsurugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric co., 2.NICHe, Tohoku Univ.)

10:00 AM - 10:15 AM

[18a-A301-5] Demonstration of switching operation in EID AlGaN/GaN MOS-HEMT

〇Takuma Nanjo¹, Yamamoto Shotaro¹, Shinagawa Tomohiro¹, Watahiki Tatsuro¹, Furuhashi Masayuki¹, Nishikawa Kazuyasu¹, Egawa Takashi² (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.Nagoya Inst. of Tech.)

10:15 AM - 10:30 AM

△ [18a-A301-6] Threshold Voltage Shift under Sub-Eg-Light Illumination in Vertical GaN Trench MOSFETs

〇(M1)Mitsuki Inagaki¹, Oka Tohru^2,3, Nariaki Tanaka³, Kazuya Hasegawa³, Takatomi Izumi³, Tsutomu Ina³, Go Nishio³, Takaki Niwa³, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Toyoda Gosei)

10:45 AM - 11:00 AM

△ [18a-A301-7] Lower Operating Voltage and Higher Current Density of GaN/AlN Resonant Tunneling Diode

〇Daiki Iwata¹, Takeru Kumabe¹, Hirotaka Watanabe², Manato Deki³, Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.VBL, Nagoya Univ., 4.Akasaki R.C.)

11:00 AM - 11:15 AM

△ [18a-A301-8] Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations

〇Woong Kwon¹, Seiya Kawasaki¹, Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda², Hirotaka Ikeda⁴, Kenji Iso^2,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, Nagoya Univ., 4.Mitsubishi Chemical, 5.Akasaki R.C.)

11:15 AM - 11:30 AM

△ [18a-A301-9] N-polar GaN HEMT with high-resistivity C-doped GaN buffer layer

〇Yuki Yoshiya¹, Takuya Hoshi¹, Takuya Tsutsumi¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)

11:30 AM - 11:45 AM

[18a-A301-10] Design and fabrication of Hi-Lo type GaN IMPATT diode at microwave band

〇Seiya Kawasaki¹, Takeru Kumabe¹, Manato Deki^1,2, Hirotaka Watanabe³, Atsushi Tanaka³, Yoshio Honda³, Manabu Arai³, Hiroshi Amano^2,3 (1.Nagoya Univ., 2.VBL, Nagoya Univ., 3.IMaSS, Nagoya Univ.)

11:45 AM - 12:00 PM

[18a-A301-11] Improvement of Blocking Voltage by Utilizing Moderately-Doped Contact Layer in Wide-Recessed AlGaN/GaN Gated Anode Diodes for Microwave Rectification

〇Tomoya Watanabe¹, Hidemasa Takahashi¹, Yuji Ando^1,2, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

12:00 PM - 12:15 PM

[18a-A301-12] Comparison between Y₂₂ and Transient Signals for Trapping Response in GaN HEMT

〇Toshiyuki Oishi¹, Kaji Daiki¹, Masaya Tabuchi¹, Tomohiro Otsuka², Yutaro Yamaguchi², Shitaro Shinjo², Yamanaka Koji² (1.Saga Univ., 2.Mitsubishi Electric Corp.)

12:15 PM - 12:30 PM

[18a-A301-13] Fabrication and Characterization of GaN HEMT on-diamond Structure

〇(M1)Yuzuki Hayakawa¹, Yutaka Ohno², Yasuyoshi Nagai², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.IMR Tohoku Univ.)

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