Yuki Yoshiya

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Speaker, Author, Co-Author

Sat. Mar 18, 2023 9:00 AM - 12:30 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM

△ [18a-A301-9] N-polar GaN HEMT with high-resistivity C-doped GaN buffer layer

〇Yuki Yoshiya¹, Takuya Hoshi¹, Takuya Tsutsumi¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs)