10:45 AM - 11:00 AM
△ [18a-A301-7] Lower Operating Voltage and Higher Current Density of GaN/AlN Resonant Tunneling Diode
〇Daiki Iwata1, Takeru Kumabe1, Hirotaka Watanabe2, Manato Deki3, Yoshio Honda2, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.VBL, Nagoya Univ., 4.Akasaki R.C.)