Tomoya Watanabe

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Speaker, Author, Co-Author

Sat. Mar 18, 2023 9:00 AM - 12:30 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM

[18a-A301-11] Improvement of Blocking Voltage by Utilizing Moderately-Doped Contact Layer in Wide-Recessed AlGaN/GaN Gated Anode Diodes for Microwave Rectification

〇Tomoya Watanabe¹, Hidemasa Takahashi¹, Yuji Ando^1,2, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Institute of Technology)

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