[18a-A302-1~6] 6.3 Oxide electronics

[18a-A302-1] Electrode Dependence of Thermally Stimulated Current in Sputtered Ta₂O₅

〇Guento Misawa¹, Hisashi Shima¹, Yasuhisa Naitoh¹, Hiroyuki Akinaga¹ (1.DTech-AIST)

Keywords:tantalum oxide, thermally stimulated current, electrode dependence

Tantalum oxide (Ta₂O₅) is a transition metal oxide that has been proposed for various uses such as variable resistance elements. Utilization of the quantitative evaluation of trap levels are tried for understanding the behavior and modeling as an electronic device.We are obtaining the trap depth from Thermally Stimulated Current (TSC) caused by photoexcitation.
As for electrode, instead of iridium, which shows digital change of resistance in a device, titanium nitride is used for the measurement.
We examine the electrode dependence of TSC on Ir and titan nitride which shows analog resistance change.