[18a-A302-1~6] 6.3 Oxide electronics

[18a-A302-2] Mott-Type Resistive Switching in Ca₂RuO₄ Thin Films with Independence from Temperature-Driven Transition Characteristics

〇Atsushi Tsurumaki-Fukuchi¹, Keiji Tsubaki¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹, Yasuo Takahashi¹ (1.Faculty of IST, Hokkaido Univ., 2.MSL, Tokyo Tech.)

Keywords:metal-insulator transition, ruthenium oxide, resistive switching

This study demonstrates that high-speed abrupt resistive switching can be induced in epitaxial thin films of Ca₂RuO₄/LaAlO₃ (001) by electrical input from two-terminal metal electrodes despite the complete absence of abrupt temperature-driven metal–insulator transition in the resistivity–temperature characteristics. The observations of abrupt resistive switching in the Ca₂RuO₄ thin films are clearly inconsistent with previous models for Mott-type resistive switching in strongly correlated materials, where the presence of an abrupt temperature-driven metal–insulator transition has been considered essential for the emergence of resistive switching, and strongly suggest the presence of an unconventional type of resistive switching mechanism in Ca₂RuO₄ thin films, possibly based on the nonequilibrium electronic phase transition by current injections.