10:15 AM - 10:30 AM
[18a-A302-2] Mott-Type Resistive Switching in Ca2RuO4 Thin Films with Independence from Temperature-Driven Transition Characteristics
Keywords:metal-insulator transition, ruthenium oxide, resistive switching
This study demonstrates that high-speed abrupt resistive switching can be induced in epitaxial thin films of Ca2RuO4/LaAlO3 (001) by electrical input from two-terminal metal electrodes despite the complete absence of abrupt temperature-driven metal–insulator transition in the resistivity–temperature characteristics. The observations of abrupt resistive switching in the Ca2RuO4 thin films are clearly inconsistent with previous models for Mott-type resistive switching in strongly correlated materials, where the presence of an abrupt temperature-driven metal–insulator transition has been considered essential for the emergence of resistive switching, and strongly suggest the presence of an unconventional type of resistive switching mechanism in Ca2RuO4 thin films, possibly based on the nonequilibrium electronic phase transition by current injections.