[18a-B401-1~9] 15.4 III-V-group nitride crystals

[18a-B401-4] Selective-area growth of GaN using DC pulse sputtering method

〇DAISUKE HASEGAWA¹, Tatsuya Honda¹, Satoshi Kamiyama², Nobuaki Takahashi³, Hitoshi Miura³, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Meijo Univ., 3.Tokyo Electron.)

Keywords:Selective-area growth, GaN

GaN nanocolumn crystals are expected to be used as the base layer for InGaN-based LEDs and lasers because dislocation-free crystals can be obtained by terminating the penetrating dislocations propagating from the underlying substrate to the column sidewalls. To fabricate nanocolumn crystals on substrates that are not tolerant to high temperatures, such as glass, requires growth temperatures below the softening point. In this study, we focused on the DC pulse sputtering method, which can grow high-quality epitaxial films at low temperatures, and attempted selective growth of GaN using a Ti mask on a c-plane GaN template as an initial study.