[18a-D221-1~7] 9.3 Nanoelectronics

[18a-D221-6] Energy barrier height dependence of noise-energy conversion in an aF DRAM

〇Kensaku Chida¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

Keywords:Silicon nanodevices, Electron counting statistics, Noise

We have measured the energy barrier height dependence of noise-energy conversion in an attofarad (aF) DRAM. We found that the charge accumulation in the aF DRAM is independent of the energy barrier height. This means that the noise-energy conversion originates from the potential difference generated by the noise rectification at the energy barrier.