Poster presentation

[16a-PB01-1~2] 9.3 Nanoelectronics

Thu. Mar 16, 2023 9:30 AM - 11:30 AM PB01 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

▲ [16a-PB01-1] How to extract hot carriers from perovskite nanocrystal by fullerenes: forming state-coupled complexes

〇(D)Yusheng Li¹, Dandan Wang¹, Yongge Yang¹, Yuyao Wei¹, Dong Liu¹, Hua Li¹, Chao Ding¹, Shuzi Hayase¹, Qing Shen¹ (1.The University of Electro Communications)

9:30 AM - 11:30 AM

▲ [16a-PB01-2] High carrier transport based on perovskite quantum dots in perovskite matrix

〇(D)yongge yang, yusheng li, chao ding, shuzi hayase, qing shen

Oral presentation

[18a-D221-1~7] 9.3 Nanoelectronics

Sat. Mar 18, 2023 9:00 AM - 11:00 AM D221 (Building No. 11)

Takahide Oya(Yokohama Natl. Univ.), Shigeru Imai(立命館大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-D221-1] Investigation of improvement of single-electron information-processing circuit
based on principle of molecular computing

〇Kairi Yokoyama¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:15 AM - 9:30 AM

[18a-D221-2] Performance Improvement of Single-Electron Reservoir Computing Circuit

〇Shunya Watanabe¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 9:45 AM

[18a-D221-3] Design of single-electron synaptic circuitharnessing thermalnoise(2)

〇Takuto Kobayashi¹, Oya Takahide¹ (1.Yokohama National Univ.)

9:45 AM - 10:00 AM

[18a-D221-4] Study on controlling direction of plane wave propagation in single-electron reaction-diffusion circuit

〇Keiichiro Tamura¹, Takahide Oya¹ (1.Yokohama Univ.)

10:15 AM - 10:30 AM

[18a-D221-5] Observation of series current paths in parallel-coupled double quantum dots

〇Tsuyoshi Hatano¹, Toshihiro Kubo², Shinichi Amaha³, Yasuhiro Tokura⁴, Seigo Tarucha³ (1.Nihon Univ., 2.NIT Tsuyama Col., 3.RIKEN CEMS, 4.Univ. of Tsukuba)

10:30 AM - 10:45 AM

[18a-D221-6] Energy barrier height dependence of noise-energy conversion in an aF DRAM

〇Kensaku Chida¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

10:45 AM - 11:00 AM

▲ [18a-D221-7] Mechanism of electromigration in metal nanocontacts in the diffusive transport regime

〇(D)Tian Yue¹, Shaoqing Du³, Kazuhiko Hirakawa^1,2 (1.IIS, Univ.of Tokyo, 2.INQIE,Univ.of Tokyo, 3.SIMIT, CAS)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[16a-PB01-1~2] 9.3 Nanoelectronics

▲ [16a-PB01-1] How to extract hot carriers from perovskite nanocrystal by fullerenes: forming state-coupled complexes

▲ [16a-PB01-2] High carrier transport based on perovskite quantum dots in perovskite matrix

[18a-D221-1~7] 9.3 Nanoelectronics

[18a-D221-1] Investigation of improvement of single-electron information-processing circuit
based on principle of molecular computing

[18a-D221-2] Performance Improvement of Single-Electron Reservoir Computing Circuit

[18a-D221-3] Design of single-electron synaptic circuitharnessing thermalnoise(2)

[18a-D221-4] Study on controlling direction of plane wave propagation in single-electron reaction-diffusion circuit

[18a-D221-5] Observation of series current paths in parallel-coupled double quantum dots

[18a-D221-6] Energy barrier height dependence of noise-energy conversion in an aF DRAM

▲ [18a-D221-7] Mechanism of electromigration in metal nanocontacts in the diffusive transport regime

Authenticate

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[16a-PB01-1~2] 9.3 Nanoelectronics

▲ [16a-PB01-1] How to extract hot carriers from perovskite nanocrystal by fullerenes: forming state-coupled complexes

▲ [16a-PB01-2] High carrier transport based on perovskite quantum dots in perovskite matrix

[18a-D221-1~7] 9.3 Nanoelectronics

[18a-D221-1] Investigation of improvement of single-electron information-processing circuitbased on principle of molecular computing

[18a-D221-2] Performance Improvement of Single-Electron Reservoir Computing Circuit

[18a-D221-3] Design of single-electron synaptic circuitharnessing thermalnoise(2)

[18a-D221-4] Study on controlling direction of plane wave propagation in single-electron reaction-diffusion circuit

[18a-D221-5] Observation of series current paths in parallel-coupled double quantum dots

[18a-D221-6] Energy barrier height dependence of noise-energy conversion in an aF DRAM

▲ [18a-D221-7] Mechanism of electromigration in metal nanocontacts in the diffusive transport regime

Authenticate

[18a-D221-1] Investigation of improvement of single-electron information-processing circuit
based on principle of molecular computing