[18p-B401-1~13] 15.4 III-V-group nitride crystals

[18p-B401-3] V/III Ratio Dependence of AlN Growth by RF-MBE

〇Yuma Kawakami¹, Naoya Mokutani¹, Momoko Deura², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO)

Keywords:Aluminum nitride, MBE

In AlN crystal growth, Al atoms have a short migration length and a vapor pressure that is one order of magnitude lower than that of Ga. Therefore, the growth condition region where a flat and droplet-free crystal surface can be obtained is very narrow. Therefore, in this study, we aimed to grow high-quality AlN crystals on GaN/Sapphire template substrates and investigated the V/III ratio dependence of crystallinity and surface morphology.