Special Issue: Control and Manipulation of Microstructure in Magnetic Materials for Functional Devices

[1-32A] Design and fabrication of the pressurizing mechanism of piezoelectric magnetoresistive devices

^○Ryota Kitagawa¹, Hayato Onozawa¹, Yoshiya Stutler¹, Yota Takamura¹, Takashi Harumoto², Ji Shi², Yoshio Nakamura², Shigeki Nakagawa¹ (1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2. Department of Materials Science and Engineering, Tokyo Institute of Technology)

Keywords:Magnetoresistive Random Access Memory, Piezoelectric Magnetic Tunnel Junction, Strain-Assisted Current Induced Magnetization Switching, Inverse Magnetostriction Effect, Perpendicular Magnetic Anisotoropy