Electrical Resistance Materials

Fri. Oct 20, 2023 1:30 PM - 2:30 PM Room II (Clover Hall)

Chairperson:Hiroto OHTA(Doshisha University)

+Add all to schedule

1:30 PM - 1:45 PM

[2-36A] Composition dependence of ferroelectric properties of (0.4-x)(Bi_0.5K_0.5)TiO₃-0.6BiFeO₃-xK(Ta_0.97Mo_0.03)O₃ and investigation of average, local and electronic structures based on diffraction and total scattering

*Masaki Kondo¹, Chiaki Ishibashi¹, Naoto Kitamura¹, Yasushi Idemoto¹ (1. Tokyo University of Science ) (※This presenter is a candidate for the Student Award for Outstanding Presentation.)

1:45 PM - 2:00 PM

[2-37A] Effects of Co and Mn additions in ZnO varistors from the viewpoint of solid state chemistry

*Hideyuki Okinaka¹, Wataru Sakamoto² (1. Okinaka Ceramic Technology Institute, 2. Chubu University)

2:00 PM - 2:15 PM

[2-38A] Crystal structure and thermistor properties of NiMn₂O₄ thin film prepared by sputtering method

*tasuku matsuike¹, koichi kakizaki¹ (1. saitama university)

2:15 PM - 2:30 PM

[2-39A] Electrical conduction mechanism of disk-like conductor particles dispersed glass-based composites

*Noriaki MORIMOTO¹, Yasuhiro YOSHIHARA¹, Haruka MAEDA¹, Koki ICHIKAWA¹, Daiki HAMANO², Hiromichi KATSUYAMA², Kei YAMAMOTO², Shinji HARUI², Hiroyuki KITAGAWA¹ (1. Shimane university, 2. Suzuki Gokin Co., Ltd. ) (※This presenter is a candidate for the Student Award for Outstanding Presentation.)

Sessions

General Session » Electrical Resistance Materials

Electrical Resistance Materials

[2-36A] Composition dependence of ferroelectric properties of (0.4-x)(Bi_0.5K_0.5)TiO₃-0.6BiFeO₃-xK(Ta_0.97Mo_0.03)O₃ and investigation of average, local and electronic structures based on diffraction and total scattering

[2-37A] Effects of Co and Mn additions in ZnO varistors from the viewpoint of solid state chemistry

[2-38A] Crystal structure and thermistor properties of NiMn₂O₄ thin film prepared by sputtering method

[2-39A] Electrical conduction mechanism of disk-like conductor particles dispersed glass-based composites

Authentication

Sessions

General Session » Electrical Resistance Materials

Electrical Resistance Materials

[2-36A] Composition dependence of ferroelectric properties of (0.4-x)(Bi0.5K0.5)TiO3-0.6BiFeO3-xK(Ta0.97Mo0.03)O3 and investigation of average, local and electronic structures based on diffraction and total scattering

[2-37A] Effects of Co and Mn additions in ZnO varistors from the viewpoint of solid state chemistry

[2-38A] Crystal structure and thermistor properties of NiMn2O4 thin film prepared by sputtering method

[2-39A] Electrical conduction mechanism of disk-like conductor particles dispersed glass-based composites

Authentication

[2-36A] Composition dependence of ferroelectric properties of (0.4-x)(Bi_0.5K_0.5)TiO₃-0.6BiFeO₃-xK(Ta_0.97Mo_0.03)O₃ and investigation of average, local and electronic structures based on diffraction and total scattering

[2-38A] Crystal structure and thermistor properties of NiMn₂O₄ thin film prepared by sputtering method