Materials Development for Electronic Components in the DX/GX Era

[2-32A] Weak ferromagnetism in 4d and 5d elements substituted multiferroic BiFeO₃

*Daiki Ono¹, Takumi Nishikubo^2,1, Yuki Sakai^2,1, Kei Shigematsu^1,2, Masaki Azuma^1,2 (1. Tokyo Institute of technology, 2. Kanagawa Institute of Industrial Science and Technology ) (※This presenter is a candidate for the Student Award for Outstanding Presentation.)

Keywords:Multiferroic materials, Ultra-low-power consumption memory device, High-pressure synthesis, Weak ferromagnetism