[1Aa01-11] 放射光表面科学部会「放射光による表面界面の先端的解析：基礎から応用まで」

[1Aa08] Evaluation of cfrystalline silicon photovaltaic by HAXPES

Tappei Nishihara ¹, Hyunju Lee², Tomohiko Hara³, Taiga Tsukushi¹, *Atsushi Ogura^1,2 (1. Meiji University , 2. MREL, Meiji Univ., 3. Tyota Technnlogical Institute)

In order to improve the efficiency of crystalline silicon solar cells, the factors that deteriorated the conversion efficiency were evaluated using hard X-ray photoelectron spectroscopy (HAXPES). In particular, evaluation of characteristic deterioration factors related to transparent conductive films used in SHJ solar cells. New carrier selective contact materials such as titanium oxide (TiOx) and transition metal dicalgogenide (TMD), which is a two-dimensional layered material.