2021年日本表面真空学会学術講演会

Presentation information

Surface Engineering/Thin Film/Semiconductor/Magnetic, Electronic, and Photonic devices/Electronic Material Processing(SE/TF/EMP/MI/MS)

[1Dp01-13] TF/SE/EMP/MI/MS

Wed. Nov 3, 2021 1:30 PM - 4:45 PM Room D (Kotohira)

Chair:

1:45 PM - 2:00 PM

[1Dp02] Metal-insulator transition in hydrogenated NdNiO3

*Ikuya Matsuzawa1, Takahiro Ozawa1, Yusuke Nishiya1, Umar Sidik2, Azusa Hattori2, Hidekazu Tanaka2, Katsuyuki Fukutani1,3 (1. The University of Tokyo, 2. Osaka University, 3. Japan Atomic Energy Agency)

Perovskite nickelates RNiO3 with rare earths as R exhibits a metal-insulator transition (MIT) due to temperature changes., and there are many materials in which physical properties such as magnetism and electric conductivity change due to hydrogen doping. A Rrecent studies study, on the other hand, have suggested that doping RNiO3 with hydrogen induces a new insulating state, and it has been reportedshown that the resistance of SmNiO3(SNO) changes significantly at room temperature due to hydrogen doping. However, the mechanism of hydrogen-induced MIT is not well understood. The purpose of my our research is to elucidate the mechanism of hydrogen-induced MIT in RNiO3 by experimentally measuring the relation between the hydrogen concentration and electronic structure.