[1Dp01-13] TF/SE/EMP/MI/MS

[1Dp05] Spin-orbit interaction engineering in nanowire

*keiko takase¹ (1. NTT Basic Research Laboratories, NTT Corporation)

We report that our state-of-the-art III-V semiconductor nanowire FETs demonstrate that the Rashba spin-orbit interaction is largely controlled by small gate voltage, which contributes to a future prototype of a spin FET. We also discuss results obtained for a nanowire-based quantum dot, in which the spin-orbit interaction plays a siginificant role.