[2Ca07-13] TF/SE/EMP/MI/MS

[2Ca09Y] Low temperature deposition of c-axis oriented gallium nitride films using high-density convergent plasma sputtering device

*Taisei Motomura¹, Tatsuo Tabaru¹, Masato Uehara¹ (1. Sensing System Research Center, National Institute of Advanced Industrial Science and Technology)

To improve the quality of films while taking advantage of low-temperature film deposition, we have proposed a unique sputtering device capable of convergent irradiation of high-density plasmas to the liquid metal target surface using a convergent magnetic field generated by an external coil and a permanent magnet. This convergent magnetic field suppresses the ion damage caused by high-energy ions in plasmas and the temperature rise of the substrate caused by secondary electrons from the target surface. In this presentation, we present the temperature dependence of the low-temperature epitaxial-like growth of GaN thin films obtained by using our sputtering device.