[3Ba01-12] スパッタリングおよびプラズマプロセス技術部会「スパッタ・プラズマで切り拓くナノ構造の世界」

[3Ba12S] Fabrication and structural control of HfN Spindt-type emitters using triode reactive HPPMS

*Makoto Ozawa¹, Md. Suruz Mian¹, Takeo Nakano¹, Hiromasa Murakata², Katsuhisa Murakami², Masayoshi Nagao² (1. Seikei University, 2. National Institute of Advanced Industrial Science and Technology)

Triode high power pulsed sputtering (t-HPPMS) has been attempted to fabricate pointed emitters. By using Hf, which is known to have higher ionization efficiency than Mo, we could fabricate much more sharp HfN emitters with an aspect ratio (AR: half-height/half-width) of up to 2.3. However, shape optimization was necessary to realize the electron emission. In this study, we fabricated a HfN emitter prototype and an emitter with a less protruding tip by reactive t-HPPMS.