口頭発表

[3Ga01-10] Surface Science(SS1) Physical Property

2023年11月2日(木) 09:30 〜 12:15 中会議室231 (3階)

Chair:鷺坂恵介(物質・材料研究機構)、多田幸平(産業技術総合研究所)

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09:30 〜 09:45

[3Ga01] AFM characterization of lubricant-TiO₂(110) interfaces

*Akitsu Sakata¹, Shiho Moriguchi^1,2, Hiroshi Onishi^1,3 (1. Department of Chemistry, Kobe University, 2. Shimadzu Techno-Research Incorporated, 3. Institute for Molecular Science, National Institutes of Natural Sciences)

09:45 〜 10:00

[3Ga02] Model calculations for the prediction of the diradical character of physisorbed molecules: p-Benzyne/MgO and p-Benzyne/SrO

*Kohei Tada¹, Takashi Kawakami^2,3, Yoyo Hinuma¹ (1. National Institute of Advanced Industrial Science and Technology (AIST), 2. RIKEN Center for Computational Science, 3. Graduate School of Science, Osaka University)

10:00 〜 10:15

[3Ga03] Zirconium diffusion on tungsten (100) surface of Schottky electron sources

*Soichiro Matsunaga¹, Aki Takei¹, Souichi Katagiri¹ (1. R&D group, Hitachi Ltd.)

10:15 〜 10:30

[3Ga04] Effect of lanthanoid shrinkage on surface adsorption of astatine on gold

*Hideaki Kasai^1,2, Jeffrey Tanudji², Susan M Aspera³, Michio Okada^1,4, Tetsuo Ogawa^1,5, Hiroshi Nakanishi⁶ (1. Institute of Radiation Science, Osaka University, 2. Department of Applied Physics, Osaka University, 3. Research Initiative for Supra-Materials, Shinshu University, 4. Department of Chemistry, Osaka University, 5. Department of Physics, Osaka University, 6. National Institute of Technology, Akashi College)

休憩時間 (10:30 〜 10:45)

10:45 〜 11:00

[3Ga05] The development of low-temperature scanning tunneling potentiometry (II)

Masayuki Hamada¹, *Masahiro Haze¹, Yukio Hasegawa¹ (1. The Institute for Solid State Physics, The University of Tokyo)

11:00 〜 11:15

[3Ga06] Surface conductivity on monolayer Pb films formed on Si(111) measured by low temperature scanning tunneling potentiometry

*Masahiro Haze¹, Masayuki Hamada¹, Yudai Sato¹, Yukio Hasegawa¹ (1. Institute for Solid State Physics, The University of Tokyo)

11:15 〜 11:30

[3Ga07] STM-induced luminescence mediated via quantum well states of indium ultra-thin films

*Kenta Kuroishi¹, Hiroshi Okuyama¹, Shinichiro Hatta¹, Tetsuya Aruga¹ (1. Graduate school of Kyoto University)

11:30 〜 11:45

[3Ga08] Helicity-dependent photocurrent induced by circularly polarized infrared light at atomic bilayer superstructure Si(111)-√3×√3-(Tl, Sn)

*Ibuki Taniuchi¹, Ryota Akiyama¹, Rei Hobara¹, Shuji Hasegawa¹ (1. Department of Physics, The University of Tokyo)

11:45 〜 12:00

[3Ga09] Topological surface state of Bi-doped PbSb₂Te₄hybridized with bulk states

*Keisuke Sagisaka¹, Yuya Hattori¹, Shunsuke Yoshizawa¹, Yuki Tokumoto², Keiichi Edagawa² (1. National Institute for Materials Science, 2. Institute of Industrial Science, The University of Tokyo)

12:00 〜 12:15

[3Ga10] Adsorption, intercalation and spin injection at the surface of Bi₂Se₃ thin films by spin-polarized hydrogen atomic beam

*Yusei Ohashi¹, Takahiro Ozawa¹, Hirokazu Ueta², Hiroyuki Koshida¹, Markus Wilde¹, Katsuyuki Fukutani^1,2 (1. Institute of Industrial Science, the University of Tokyo., 2. Advanced Science Research Center, Japan Atomic Energy Agency)

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