2023年日本表面真空学会学術講演会

講演情報

口頭発表

[1Ga01-10] Thin Film (TF)

2023年10月31日(火) 09:45 〜 12:30 中会議室231 (3階)

Chair:中塚 理(名古屋大学)

12:00 〜 12:15

[1Ga09] Fabrication of layered-electride Ca2N thin films using reactive magnetron sputtering

*Hiroki Kitagawa1, Ryota Shimizu2, Shigeru Kobayashi2, Taro Hitosugi2 (1. School of Materials and Chemical Technology, Tokyo Institute of Technology, 2. Department of Chemistry, The University of Tokyo)

Layered-electride Ca2N has two-dimensional layered structures with alternating layers of Ca2N+ and layers of electrons (e-). Due to the high in-plane electron mobility, device applications of Ca2N electride thin films are expected. However, so far, there has been no report of epitaxial thin-film fabrication of Ca2N. In this study, Ca2N thin films (thickness: ~300 nm) were deposited on yttria-stabilized zirconia (111) substrate using reactive magnetron sputtering. We optimized growth conditions as parameters of substrate temperature and nitrogen partial pressure. As a result, X-ray diffraction and Raman spectroscopy showed the fabrication of (00n)-oriented Ca2N thin film.

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