2023年日本表面真空学会学術講演会

講演情報

口頭発表

[1Gp01-06] Thin Film (TF)

2023年10月31日(火) 14:00 〜 16:00 中会議室231 (3階)

Chair:中塚 理(名古屋大学)、大平 圭介(北陸先端科学技術大学)

14:00 〜 14:30

[1Gp01(招待講演)] Formation of thin films by Cat-CVD for photovoltaic application

*Keisuke Ohdaira1 (1. Japan Advanced Institute of Science and Technology)

The fundamentals of Cat-CVD and its photovoltaic application are reviewed. Cat-CVD can produce amorphous silicon (a-Si) films with good surface passivation ability on the surface of crystalline silicon wafers, and Cat-CVD a-Si films are thus widely used in silicon heterojunction (SHJ) solar cells. Cat-CVD silicon nitride (SiNx) can be used as anti-reflection coating and passivation films for crystalline silicon solar cells. It has been recently demonstrated that ultra-thin Cat-CVD SiNx films are available for the tunneling layer of a carrier selective contact. In addition, by taking advantage of the ability of Cat-CVD to deposit high-density thin films even at low temperatures, CVD SiNx films are also used as gas barrier films protecting materials and devices with low temperature and humidity tolerance such as organic light-emitting diodes (OLEDs) and perovskite solar cells.

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