[1Hp01-06] Semiconductor/Magnetic, Electronic, and Photonic devices/Electronic Material Processing (SE/TF/EMP/MI/MS)

[1Hp04] Novel non-destructive method to evaluate cleaning performances of three-dimensional nanostructures on Si ∼Au embedding at the bottoms of deep trenches on Si by metal-assisted chemical etching∼

*Tomoki Higashi¹, Shiika Murase², Kouji Inagaki¹, Kenta Arima¹ (1. Graduate School of Engineering, Osaka University, 2. School of Engineering , Osaka University)

Recent semiconductor devices have three-dimensional structures due to the scaling limits, and their aspect ratio tends to increase. In order to manufacture those semiconductor devices for a practice use, cleaning processes are becoming much more important. Based on this background, we aim at evaluating cleaning characteristics at the bottoms of 3D structures of semiconductor devices by Angle-Resolved X-ray Photoelectron Spectroscopy. An important key to achieve this is to embed a heterogeneous “landmark” element at some bottoms without introducing mechanical damages. If photoelectrons can be collected from this element. it guarantees a detector to be aligned with the bottoms. In order to test the proposed method, trench structures with an aspect ratio of about 6 were fabricated on Si by metal-assisted chemical etching. We confirmed by Scanning Electron Microscopy that Au catalysts reside at the bottoms of the trench structures as we intended.