[1P08] Molecular dynamics studies of indentation and sliding processes on 6H-SiC(0001) surface
In this work, structural changes of 6H-SiC (0001) substrate surface, power-semiconducting material, were studied during indentation and sliding processes using molecular dynamics simulation. The simulation model comprised of 6H-SiC(0001) substrate and a virtual rigid tip composed of helium atoms was adopted with Lennard-Jones and Tersoff potentials applied. Simulations of vertical indentation and horizontal scan were performed. During vertical indentation process, the loading force was found to decrease discretely at the critical tip height due to an increase in the substrate surface atoms supporting the tip due to changes of the substrate structure. During the horizontal scan process under the loading force of 100nN, the frictional force curve with periodic stick-slip motion reflects the lattice constant.
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