[2P01-53] Poster Presentation

[2P24] Photoelectron spectroscopy of Si{111} facet surfaces on artificially-designed three-dimensional facet-lined structures

*Ni'matil Mabarroh¹, Juharni Juharni¹, Yasunari Kimoto¹, Yoshihiro Kitagawa¹, Yuki Ida¹, Wataru Imayama¹, Liliany N. Pamasi¹, HaoBang Yang¹, Yuya Sakai¹, Tomoya Shimizu¹, Azusa N. Hattori², Shin-Ichiro Tanaka², Shigemasa Suga², Hidekazu Tanaka², Wang Runcheng³, FangZhun Guo³, Kiyohisa Tanaka⁴, Ken Hattori¹ (1. Graduate School of Science and Technology, Nara Institute of Science and Technology, 2. SANKEN, Osaka University, 3. Institute of Mechanical Engineering, Dalian Jiaotong University, 4. UVSOR Synchrotron Facility, Institute for Molecular Science)

We demonstrate the construction of an epitaxial grown film on Si{111} facet surfaces and film band structures, which promise electronic devices using 3D shaped high-crystalline films in future. We have constructed 3D-Si facet-lined structures on Si(001) substrates with (111) and(-1-11) facet surfaces, showing 7×7 reconstruction in low-energy electron diffraction (LEED) and created well-ordered √3×√3-Ag as a prototype of a functional thin-film. We obtained clear spots Si{111}7×7 and √3×√3-Ag reconstruction and successfully obtained the surface and bulk band structure, in both facet surfaces. In order to survey specific states arising from the singular 3D regions such as edges, we measured Si 2p core levels depending on the optical geometry to discuss chemical components.