2023年日本表面真空学会学術講演会

講演情報

ポスター発表

[2P01-53] Poster Presentation

2023年11月1日(水) 17:00 〜 18:30 ポスター (1階)

[2P32] Epitaxal growth of CaSi2 thick film on Si substrate and its thermoelectric properties

*Takashi Yoshizaki1, Mikio Kojima1, Takafumi Ishibe1,2, Yoshiaki Nakamura1,2 (1. Graduate School of Engineering Science, Osaka University, 2. OTRI, Osaka University)

Thermoelectric film on Si substrate has drawn much attention as a power source for internet of things sensor. In recent years, we found CaSi2 films composed of silicene and Ca layer, one of the layered materials. Therein, modulating the buckling structure of silicene highly increased power factor, which was the highest value (~40 μWcm-1K-2) at room temperature among silicide materials compatible to Si process. However, the film thickness of CaSi2 does not meet the requirement for power generation. In this study, we develop the growth method enabling us to increase the thickness of CaSi2 film. In this growth method, Ca and Si are simultaneously deposited on Si substrates at room temperature, followed by crystallization at high temperature unlike the previous method of solid phase epitaxy in Ca films/Si substrates. The low temperature deposition prevents Ca desorption, leading to thick films. Furthermore, we reveal the thermoelectric properties of CaSi2 thick films.

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