2023年日本表面真空学会学術講演会

講演情報

口頭発表

[3Ga01-10] Surface Science(SS1) Physical Property

2023年11月2日(木) 09:30 〜 12:15 中会議室231 (3階)

Chair:鷺坂 恵介(物質・材料研究機構)、多田 幸平(産業技術総合研究所)

12:00 〜 12:15

[3Ga10] Adsorption, intercalation and spin injection at the surface of Bi2Se3 thin films by spin-polarized hydrogen atomic beam

*Yusei Ohashi1, Takahiro Ozawa1, Hirokazu Ueta2, Hiroyuki Koshida1, Markus Wilde1, Katsuyuki Fukutani1,2 (1. Institute of Industrial Science, the University of Tokyo., 2. Advanced Science Research Center, Japan Atomic Energy Agency)

Bi2Se3 is one of the typical three-dimensional topological insulators, which have metallic surface states with spin-momentum locked. When a spin current flows through such a surface state, the spin current is converted into an electric current, which is known as the inverse Edelstein effect. We have developed a spin-polarized atomic hydrogen beam that can select a single electron spin state. First, we conducted the analyses of structural changes and hydrogen desorption characteristics of atomic-hydrogen-exposed Bi2Se3 thin films. Based on the LEED and TDS results and the previous theoretical study, it is suggested that atomic hydrogen exposure to Bi2Se3 at 295 K results in hydrogen adsorption only on the surface, while at 90 K, hydrogen intercalation between the QLs occurred in addition to hydrogen adsorption. Finally, we report on the results of spin injection into Bi2Se3 thin films using a spin-polarized hydrogen atom beam.

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