[3Ia01-06] Two-Dimensional (2D) Materials

[3Ia01] Dislocation annihilation in epitaxial silicene formed on diboride thin films

Antoine Fleurence¹, *Yukiko Yamada-Takamura¹ (1. Japan Advanced Institute of Science and Technology (JAIST))

Two-dimensional (2D) materials formed epitaxially on single-crystal surfaces can have stress domains originating from the lattice mismatch between the lattices of 2D material and substrate surface. Epitaxial silicene sheet formed spontaneously on epitaxial ZrB₂(0001) thin film grown on Si(111) substrate has a characteristic domain structure. The domain boundaries are part of continuous, buckled honeycomb lattice which contain partial dislocations. The transformation process of this stripe domains into a “single-domain” upon silicon atom adsorption was revealed in detail by in-situ real time STM observations at room temperature, providing insights into how crystallographic defects can be healed in 2D materials.