Study of Laser Excitation and Damage Threshold in Silicon Using Three-Temperature Model

Prachi Venkat

講演情報

Oral Presentation

Oral Presentations

Session 35: Special Session 2-3 "Machine Learning and Simulation for Laser Processing"

2023年6月16日(金) 09:10 〜 10:40 Room 3 (1F Meeting Room ＃1)

Session Chairs:Kenichi Ishikawa(The University of Tokyo, Japan), Tomohito Otobe(National Institutes for Quantum and Radiological Science and Technology, Japan)

10:00 〜 10:20

[R3-S35-3] Study of Laser Excitation and Damage Threshold in Silicon Using Three-Temperature Model

*Prachi Venkat¹, Tomohito Otobe^1,2 (1. Kansai Photon Science Institute, National Institutes for Quantum Science and Technology, Kyoto (Japan), 2. Photon Science Center, The University of Tokyo (Japan))

キーワード：Laser processing, Three-temperature model, Simulation

C000053

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