(Special session) Utilization of Simulation and Data Science in Materials Processin 2

[3K0303-07-02] Development of Ultra-High Quality SiC Crystal Growth Technology Using Machine Learning

○Toru Ujihara¹ (1. Nagoya University)

Chairperson: 盛満　正嗣（同志社大学）

Keywords:-

我々は超高品質SiCバルク結晶の実現を目指して、溶液成長法の開発を行ってきた。この開発においては、溶媒中の温度分布・流れ分布・濃度分布の制御がカギとなる。我々は、機械学習を活用して溶媒の状態を即座に予測するモデルを開発し、結晶成長プロセスの最適化を行ってきた。さらに熟練者の知見に基づく最適化技術も開発した。これにより、8インチ超の結晶成長を実現した。

We have been developing a solution growth method to realize ultra-high quality SiC bulk crystals. In this development, control of temperature distribution, flow distribution, and concentration distribution in the solvent is the key. We have developed a model that immediately predicts the solvent condition by utilizing machine learning to optimize the crystal growth process. We have also developed optimization techniques based on the knowledge of skilled workers. As a result, we have achieved crystal growth of over 8 inches.