The 9th International Conference on Multiscale Materials Modeling

講演情報

Poster Session

A. Advances in Materials Theory for Multiscale Modeling

[PO-A1] Poster Session 1

Symposium A

2018年10月29日(月) 17:45 〜 20:00 Poster Hall

[P1-07] First-principles Study on Electronic Properties of Hybrid MABX3 perovskites (MA= CH3NH3+; B= Pb, Sn, Ge; X= I, Br, Cl)

Narasak Pandech1,2, Thanundon Kongnok1, Sirichok Jungthawan1, Sukit Limpijumnong1, Walter R.L Lambrecht2 (1.School of Physics and NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, NakhonRatchasima 30000, Thailand, Thailand, 2.Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106-7079, USA., United States of America)

Recently, hybrid MABX3perovskites (MA= CH3NH3+; B= Pb, Sn, Ge; X= I, Br, Cl) have revolutionized emerging photovoltaic technologies with the development of highly efficient solar cells, and have attracted significant fundamental research interest. Despite the extremely fast progress in device fabrication, the materials electronic properties, which determine the photovoltaic performance, are not yet fully understood. Here, we performed calculations of these materials, using a van der Waals-corrected density functional theory (DFT) method using the Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functionals. Subsequently, we use the GW-approximation to calculate the bands as quasiparticle excitations including also the spin-orbit coupling. The orientation and position of the MA-cation is found to significantly affect the electronic properties around the band edges of the Pb and Sn based compounds. Because Ge based halides already prefer a rhombohedrally distorted perovskite structure with off-centered Ge even for a simple inorganic cation (e.g. Cs), the three-fold symmetry of the MA ion is compatible with a preferred orientation of the molecules along the rhombohedral axis. The interplay between its dipole and the Ge off-centering leads to interesting ferro-electric behavior.