Introducing Epitaxial Nitride Ferroelectrics to III-N Technology

Georg Schönweger

Presentation information

Oral Session

B. Fundamentals of Novel Structure of Materials » [B-4] Recent development of novel ferroelectric materials, from fundamentals to applications

[B4-O10] Slot 10

Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room N (G314+315)

Chair: Junling Wang (Southern University of Science and Technology), Takahisa Shiraishi (Tokyo Institute of Technology)

5:00 PM - 5:30 PM

[B4-O10-03 (Symposium Invited)] Introducing Epitaxial Nitride Ferroelectrics to III-N Technology

Georg Schönweger¹, Adrian Petraru¹, Md Redwanul Islam², Niklas Wolff², Timo Rieß², Fabian Lofink³, Lorenz Kienle², Hermann Kohlstedt¹, *Simon Fichtner^2,3 (1. Institute of Electrical Engineering and Information Engineering, Kiel University, Kaiserstr. 2, D-24143 Kiel (Germany), 2. Institute for Material Science, Kiel University, Kaiserstr. 2, D-24143 Kiel (Germany), 3. Fraunhofer Institute for Silicon Technology (ISIT), Fraunhoferstr. 1, D-25524 Itzehoe (Germany))

Keywords:Ferroelectric, AlScN, wide bandgap semiconductor, compound semiconductor, high temperature

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