[D3-O10] Slot 10

[D3-O10-04] Enhanced thermoelectric figure-of-merit ZT in layered SnSe doped with isovalent Te and its origin clarified by density functional theory

*XINYI HE¹, Haoyun Zhang¹, Takumi Nose¹, Takayoshi Katase¹, Terumasa Tadano², Keisuke Ide¹, Hidenori Hiramatsu^1,3, Hideo Hosono³, Toshio Kamiya^1,3 (1. MSL, Tokyo Tech, Japan (Japan), 2. NIMS, Japan (Japan), 3. MCES, Tokyo Tech, Japan (Japan))

キーワード：Thermoelectric material, Carrier doping, Defect calculation, Phonon transport