[H2-PR18] Slot 18

[H2-PR18-26] Effect of rf bias on the film property of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition

*Akihiro Yamamoto¹, Kohei Abe¹, Iori Nagao¹, Michihiro Otaka¹, Daisuke Yamashita¹, Kunishiro Kamataki¹, Takamasa Okumura¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹ (1. Kyushu Univ. Info. sci. and Electrical Engineering (Japan), 2. National Inst. of Natural Sci. (Japan))

キーワード：Plasma CVD, CCP, rf bias