Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition with direct-current arc plasma

Hisashi Kitami

Presentation information

Oral Session

D. Electronic » [D-1] Synthesis, Processing and Characterization of Nanoscale and Functional Oxide Films -7th E-MRS & MRS-J Bilateral Symposium

[D1-O402] Oral 402

Thu. Dec 14, 2023 2:00 PM - 4:15 PM Session 11 (Room B-2)

Chair: Tetsuya Yamamoto (Kochi University of Technology), Toshihiko Maemoto (Osaka Institute of Technology)

3:15 PM - 3:30 PM

[D1-O402-04] Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition with direct-current arc plasma

*Hisashi Kitami^1,3, Junichi Nomoto², Toshiyuki Sakemi¹, Tetsuya Yamamoto³ (1. Sumitomo Heavy Industries, Ltd. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan), 3. Kochi Univ. of Tech. (Japan))

Keywords:Plasma diagnostics, Ion plating, Arc plasma, Zinc Oxide, Intrinsic point defects

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