[G1-O502] Oral 502

[G1-O502-01 (Symposium Invited)] Sputtering formation of amorphous ZnO films with non-equilibrium nitrogen incorporation and their crystallization process by annealing

*Hisato Yabuta¹, Zhiyuan Shen¹, Yuta Mido¹, Hiroyuki Setoyama², Ichiro Hirosawa², Naho Itagaki¹ (1. Kyushu Univ. (Japan), 2. Kyushu Synchrotron Light Res. Center (Japan))

キーワード：Solid phase crystallization, ZnO, rf-sputtering, non-equilibrium nitrogen incorporation, x-ray absorption fine structure (XAFS)