Origin of the Instability of High-Mobility Polycrystalline In<sub>2</sub>O<sub>3</sub>:H-based Thin Film Transistors

Prashant Ghediya

Presentation information

Oral Session

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O202] Oral 202

Tue. Dec 12, 2023 2:00 PM - 4:00 PM Session 1 (Room C-1)

Chair: Daniel Gloess (Fraunhofer FEP), David Samuel Ginley (NREL)

3:15 PM - 3:30 PM

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors

*Prashant Ghediya¹, Yusaku Magari¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1. RIES, Hokkaido Univ. (Japan), 2. IQST, Jiangsu Univ. (China), 3. Foshan Inst. for New Materials (China))

Keywords:In2O3:H, Thin film transistors, Negative bias stress, Degradation mechanism

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Presentation information

[S2-O202] Oral 202

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In2O3:H-based Thin Film Transistors

[S2-O202-04] Origin of the Instability of High-Mobility Polycrystalline In₂O₃:H-based Thin Film Transistors