[ME1] Silicon Nitride and Novel Material Waveguides

[ME1-1] Nonlinear Optical Signal Processing in CMOS-compatible Ultra-silicon-rich Nitride Devices

Invited

〇Dawn T. H. Tan¹, Doris K. T. Ng², Kelvin J. A. Ooi¹, Ezgi Sahin¹, Ju Won Choi¹, Peng Xing¹, George F. R. Chen¹, Byoung Uk Sohn¹, Hongwei Gao¹ (¹Singapore Univ. of Technology and Design, Singapore, ²Institute of Microelectronics, Singapore)

キーワード：Ultra-silicon-rich nitride, Optical parametric amplification , Bragg soliton compression, Nonlinear integrated optics

Nonlinear phenomena at the 1550nm wavelength are studied in ultra-silicon-rich nitride devices. Photonic crystals in one are demonstrated to introduce 1000x enhancement in the group velocity dispersion properties and a 40x increase in the nonlinear parameter. The large Kerr nonlinearity and negligible two-photon absorption allow strong nonlinear effects including 42.5dB optical parametric gain and Bragg soliton based temporal compression to be demonstrated.