Schedule 0 4:30 PM - 4:45 PM [LEDIA4-04] Control of the lattice relaxation of the InGaN layer grown on patterned sapphire substrates using Tri-Halide Vapor Phase Epitaxy *Kentaro Ema1, Ryohei Hieda1, Hisashi Murakami1, Akinori Koukitu1 (1. Tokyo University of Agriculture and Technology)
