Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect

Haoqing Xu

[P-26] Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect

*Haoqing Xu^1,2, Guohui Zhan^1,2, Shixin Li^1,2, Jiahao Wu^3,2, Kun Luo¹, Yu Liu⁴, Chao He ⁵, Zhenhua Wu^1,2 (1. Inst. of Microelectronics, Chinese Academy of Sciences, 2. Univ. of Chinese Academy of Sciences, 3. Inst. of Computing Technology, Chinese Academy of Sciences, 4. Inspur Group Corp. Ltd. 5. HiSilicon Technology Co., Ltd.)

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Presentation information

[P] Poster Session

[P-26] Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect

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