[Session 7] Traps and Defects

[Session_7-04] Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)

*Christoph Wilhelmer^1,2, Dominic Waldhoer², Diego Milardovich², Michael Waltl¹, Tibor Grasser² (1. Christian Doppler Lab. for Single-Defect Spectroscopy in Semiconductor Devices at the Inst. for Microelectronics, 2. Inst. for Microelectronics, Technische Univ. Wien)