Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

Ming-Yueh Huang

講演情報

Oral Session

Ferroelecric Materials & Devices

[11] Ferroelectric devices

2023年6月12日(月) 16:40 〜 18:10 Shunjyu I (Shunjyu I)

Chair:Katsuhiko Nishiguchi(NTT Basic Research laboratories)

17:30 〜 17:50

[11-03] Investigation of HfO₂/ZrO₂ Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

*Ming-Yueh Huang¹, Siao-Cheng Yan¹, Xin-Chan Zhong¹, Chih-Siang Chang¹, Chong-Jhe Sun¹, Bo-An Chen¹, Yi-Wen Lin¹, Yung-Chun Wu¹ (1. National Tsing Hua Univ. (Taiwan))

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講演情報

[11] Ferroelectric devices

[11-03] Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

パスワード

[11-03] Investigation of HfO₂/ZrO₂ Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET