[9] Application of 2D material

[9-02] Novel MoS2 Dual-Gate FET with a Highly Scaled EOT of ~2.4 nm High-k Gate Dielectric Layer for Reconfigurable Logic Gate and High-Precision Analog Synapse

*Lingqi Li¹, Haofei Zheng¹, Heng Xiang¹, Yu-Chieh Chien¹, Kah-Wee Ang^1,2 (1. Department of Electrical and Computer Eng., National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng., A*STAR (Singapore))