[9] Application of 2D material

[9-04] Scalability of h-BN Based Memristors: Yield and Variability Considerations

Abdelrahman S. Abdelrahman¹, Hesham ElSawy², Mario Lanza³, Deji Akinwande⁴, *Feras Al-Dirini^1,5 (1. Electrical Engineering Department, King Fahd University of Petroleum & Minerals (Saudi Arabia), 2. School of Computing, Queen's University (Canada), 3. Physical Science and Engineering Division, King Abdullah University of Science and Technology (Saudi Arabia), 4. Microelectronics Research Center, The University of Texas at Austin (United States of America), 5. Center for Advanced Materials, King Fahd University of Petroleum & Minerals (Saudi Arabia))