Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

[C-5-3] Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance

Y. Nakabayashi¹, M. Saitoh¹, T. Ishihara¹, T. Numata¹, K. Uchida², J. Koga¹ (1.Toshiba Corp., 2.Tokyo Inst. of Tech. , Japan)