2017 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

03: CMOS Devices / Device Physics

[E-3] TFETs

Thu. Sep 21, 2017 9:30 AM - 11:00 AM Tachibana Conference Room (Conference building 2F, Sendai International Center)

Session Chair: T. Matsukawa(AIST), S. Cho(Gachon Univ.)

9:30 AM - 10:00 AM

[E-3-01 (Invited)] Performance Evaluation of III-V Nanowire Broken-Gap TFETs Including Electron-Phonon Scattering Using an Atomistic Mode Space NEGF Technique Enabling Million Atoms NW Simulations.

A. Afzalian1, T. Vasen1, P. Ramvall1, D. Lemus2, T. Kubis2, M. Passlack1, T. -M. Shen3, J. Wu3 (1.TSMC, Leuven (Belgium), 2.Purdue Univ. (USA), 3.TSMC, Hsinchu (Taiwan))

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