2017 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

Joint Session (Area 6&14)

[N-6] Advanced Power Device Technologies II

Fri. Sep 22, 2017 11:15 AM - 12:30 PM Meeting Room 3 (Exhibition building, Sendai International Center)

Session Chair: K. Tsuda(Toshiba Infrastructure Systems & Solutions Corp.), D. Hisamoto(Hitachi, Ltd.)

11:15 AM - 11:45 AM

[N-6-01 (Invited)] Demonstration of Reduction in Vce (sat) of IGBT based on a 3D Scaling Principle

K. Kakushima1, T. Hoshii1, K. Tsutsui1, A. Nakajima2, S. Nishizawa3, H. Wakabayashi1, I. Muneta1, K. Sato4, T. Matsudai5, W. Saito5, T. Saraya6, K. Itou6, M. Fukui6, S. Suzuki6, M. Kobayashi6, T. Takakura6, T. Hiramoto6, A. Ogura7, Y. Numasawa7, I. Omura8, H. Ohashi1, H. Iwai1 (1.Tokyo Tech (Japan), 2.AIST (Japan), 3.Kyushu Univ. (Japan), 4.Mitsubishi Electric Corp. (Japan), 5.Toshiba Electronic Devices & Storage Corp. (Japan), 6.Univ. of Tokyo (Japan), 7.Meiji Univ. (Japan), 8.Kyushu Inst. of Tech. (Japan))

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