2017 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

14: Power Devices and Materials

[O-1] SiC Power Devices and Related Technologies

Wed. Sep 20, 2017 1:30 PM - 3:15 PM Meeting Room 4 (Exhibition building, Sendai International Center)

Session Chair: H. Fujiwara(Toyota Motor Corp.), D. Hisamoto(Hitachi, Ltd.)

1:30 PM - 2:00 PM

[O-1-01 (Invited)] Accurate Evaluation of Fast Threshold Voltage Shift for SiC MOS Devices Under Various Gate Bias Stress Conditions

M. Sometani1, M. Okamoto1, T. Hatakeyama1, Y. Iwahashi1, M. Hayashi1,2, D. Okamoto3, H. Yano3, S. Harada1, Y. Yonezawa1, H. Okumura1 (1.AIST (Japan), 2.DENSO Corp. (Japan), 3.Univ. of Tsukuba (Japan))

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