[OP] Welcome Address

A. Toriumi (General Chair, Organizing Committee)

2018 International Conference on Solid State Devices and Materials

[OP] Welcome Address

S. Zaima (President, The Japan Society of Applied Physics)

2018 International Conference on Solid State Devices and Materials

[PL-01 (Plenary)] A mathematical challenge to a new phase of materials science

M. Kotani (Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 09:15 〜 10:00 |PDF ダウンロード

[AW] SSDM Award/SSDM Paper Award/SSDM Young Researcher Award Ceremony

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 10:00 〜 10:30

[PL-02 (Plenary)] Exploration of Materials and Devices for Beyond CMOS Technology for Computing

I. Young (Intel Corp. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 10:45 〜 11:30 |PDF ダウンロード

[PL-03 (Plenary)] Skin-Inspired Electronics

Z. Bao (Stanford Univ. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 11:30 〜 12:15 |PDF ダウンロード

[A-1-01 (Invited)] Spintronics in 2D Materials

^○R. Kawakami¹ (1.The Ohio State Univ. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:00 〜 14:30 |PDF ダウンロード

[A-1-02] Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions

^○S. Sato¹, R. Nakane^2,1, T. Hada¹, M. Ichihara¹, M. Tanaka^1,3 (1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:30 〜 14:45 |PDF ダウンロード

[A-1-03] Temperature Dependence of Nonlocal Spin Transport in Si<100> Lateral Spin-Valve Devices

^○M. Ishikawa^1,2, M. Tsukahara¹, M. Yamada¹, Y. Fujita¹, K. Hamaya^1,3 (1.Osaka Univ. (Japan), 2.Toshiba Corp. (Japan), 3.Center for Spintronics Research Network (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:45 〜 15:00 |PDF ダウンロード

[A-1-04] Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n⁺-Si(001) interface with a SiO _x insertion layer

^○M. Ichihara¹, S. Sato¹, M. Tanaka¹, R. Nakane¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:00 〜 15:15 |PDF ダウンロード