Reliable and Low Forming Voltage RRAM Enabled by Contact Shrinking and Pre-Soldering Baking

C.H. Wang

doi:https://doi.org/10.7567/SSDM.2018.B-1-04

3:00 PM - 3:15 PM

[B-1-04] Reliable and Low Forming Voltage RRAM Enabled by Contact Shrinking and Pre-Soldering Baking

^○C.H. Wang¹, F.M. Lee¹, Y.Y. Lin¹, P.H. Tseng¹, K.C. Hsu¹, D.Y. Lee¹, M.H. Lee¹, H.L. Lung¹, K.Y. Hsieh¹, K.C. Wang¹, C.Y. Lu¹ (1.Macronix International Co., Ltd. (Taiwan))

https://doi.org/10.7567/SSDM.2018.B-1-04

2018 International Conference on Solid State Devices and Materials

[B-1-04] Reliable and Low Forming Voltage RRAM Enabled by Contact Shrinking and Pre-Soldering Baking